Sugiyama Koichi | Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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概要

• 同名の論文著者
• Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporationの論文著者

関連著者

• Sugiyama Koichi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Sugiyama Koichi

  Musashino Electrical Communication Laboratory

• Oe Kunishige

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Ando Seigo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Oe Kunishige

  Musashino Electrical Communication Laboratory

• SUGIYAMA Koichi

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Tsubaki Kotaro

  Musashino Electrical Communication Laboratory

• Kano Hiroyuki

  Musashino Electrical Communication Laboratory N.t.t.

• 椿 光太郎

  東洋大学工学部

• Tsubaki Kotaro

  Musashino Electrical Communication Laboratory N.t.t.

• Asai Hiromitsu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• MIYAZAWA Shintaro

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Miyazawa Shintaro

  Musashino Electrical Communication Laboratory N.t.t.

• Miyazawa Shintaro

  Musashino Electrical Communication Laboratory

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著作論文

• Liquid Phase Epitaxial Growth of CuGaSe_2 on ZnSe
• Heat Treatment of Zn-Doped p-Type InP
• Heat Treatment of n-Type InP in Controlled Phosphorus Vapor
• Liquid-Phase Epitaxy of Ga_In_yAs_xSb_ Quaterary Alloys on GaSb
• lnSb_Bi_x Films Grown by Molecular Beam Epitaxy
• RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
• Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering
• Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method
• Surface Emitting LED's for the 1.2-1.3 μm Wavelength with GaInAsP/InP Double Heterostructures
• 1.3 μm CW Operation of GaInAsP/InP DH Diode Lasers at Room Tenmperature

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