lnSb_<1-x>Bi_x Films Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
InSb_<1-x>Bi_x thin films were grown on InSb substrates by molecular beam epitaxy. The band-gaps of the films were confirmed to shift to longer wavelength with the increase of InBi mole fraction in the films by the measurement of p-n junction photovoltaic response.
- 社団法人応用物理学会の論文
- 1981-04-05
著者
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Oe Kunishige
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ando Seigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sugiyama Koichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Oe Kunishige
Musashino Electrical Communication Laboratory
-
Sugiyama Koichi
Musashino Electrical Communication Laboratory
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SUGIYAMA Koichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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