Vapor Phase Epitaxial Growth and Characterization of Ga_<1-y>In_yAs_<1-x>P_x Quaternary Alloys

概要

論文の詳細を見る
Epitaxial layers of Ga_<1-y>In_yAs_<1-x>P_x alloys have been grown on GaAs substrates using an AsH_3-PH_3-Ga-In-HCl-H_2 chemical vapor deposition system. The influence of mole ratios Ga/(Ga+In) and P/(As+P) in the input gas stream on the alloy composition of epitaxial layers has been investigated. As for the group V elements, the deposition probabilities of As and P species in gas phase are approximately equal for small y, but As deposition appears to become dominant for large y. As for group III elements, Ga is always incorporated more preferentially than In. The lattice constant of the quaternary alloys is ascertained to obey Vegard's law and the composition dependence of the bandgap, obtained from photoluminescence measurements, is compared with an interpolation formula, derived by use of the bowing parameters of ternary alloys.
社団法人応用物理学会の論文
1977-12-05