Short Cavity Semiconductor Laser
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-09-05
著者
-
Ando Seigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Matsumoto Nobuo
Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation
関連論文
- Photoconductive Decay in Amorphous Silicon Films : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Cleaving Process of GaAs Wafers
- lnSb_Bi_x Films Grown by Molecular Beam Epitaxy
- RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
- Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering
- Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method
- Surface Emitting LED's for the 1.2-1.3 μm Wavelength with GaInAsP/InP Double Heterostructures
- 1.3 μm CW Operation of GaInAsP/InP DH Diode Lasers at Room Tenmperature
- Properties of GaAs and GaP Amorphous-Film/Crystal Junctions
- Short Cavity Semiconductor Laser
- GaAs and GaP Amorphous-Film/Crystal Junctions : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- Influence of Structure Parameters on Lasing Characteristics of Semiconductor Lasers
- Effects of Hydrogen Incorporation during Deposition by Sputtering for Amorphous Gallium Phosphide Films
- Semiconductor Lasers with Bent Guide of Planar Structure
- Amorphous GaAs Films by Molecular Beam Deposition