GaAs and GaP Amorphous-Film/Crystal Junctions : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-06-01

著者

• Matsumoto Nobuo

  Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation

• KUMABE Kenji

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kumabe Kenji

  Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation

関連論文

• Photoconductive Decay in Amorphous Silicon Films : III-2: AMORPHOUS SOLAR CELLS : Characterization
• Cleaving Process of GaAs Wafers
• Properties of GaAs and GaP Amorphous-Film/Crystal Junctions
• Short Cavity Semiconductor Laser
• GaAs and GaP Amorphous-Film/Crystal Junctions : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
• Influence of Structure Parameters on Lasing Characteristics of Semiconductor Lasers
• Effects of Hydrogen Incorporation during Deposition by Sputtering for Amorphous Gallium Phosphide Films
• Semiconductor Lasers with Bent Guide of Planar Structure
• Effects of Superradiations on Relaxation Oscillations in Modulated Optical Outputs of Semiconductor Laser Diodes
• Amorphous GaAs Films by Molecular Beam Deposition

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