Amorphous GaAs Films by Molecular Beam Deposition

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概要

• 論文の詳細を見る

• Amorphous GaAs films are prepared by molecular beam deposition. The dependence of the film structure and composition on the preparation conditions is studied. By setting the substrate temperature just below the crystallization temperature, near-stoichiometric amorphous films are obtained with As-rich molecular beams. The electrical and optical properties of the films are summarized in terms of the composition ratio. The results imply the existence of stoichiometric amorphous GaAs films and the possibility of controlling their conduction type.

• 社団法人応用物理学会の論文
• 1980-09-05

著者

• Matsumoto Nobuo

  Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation

• Kumabe Kenji

  Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation

• MATSUMOTO Nobuo

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

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• Effects of Hydrogen Incorporation during Deposition by Sputtering for Amorphous Gallium Phosphide Films
• Semiconductor Lasers with Bent Guide of Planar Structure
• Effects of Superradiations on Relaxation Oscillations in Modulated Optical Outputs of Semiconductor Laser Diodes
• Amorphous GaAs Films by Molecular Beam Deposition

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