Semiconductor Lasers with Bent Guide of Planar Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-10-05
著者
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Matsumoto Nobuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Matsumoto Nobuo
Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation
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KAWAGUCHI Hitoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kawaguchi Hitoshi
Musashino Electrical Communication Laboratory N.t.t
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MATSUMOTO Nobuo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- Photoconductive Decay in Amorphous Silicon Films : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Cleaving Process of GaAs Wafers
- Properties of GaAs and GaP Amorphous-Film/Crystal Junctions
- Short Cavity Semiconductor Laser
- GaAs and GaP Amorphous-Film/Crystal Junctions : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- Influence of Structure Parameters on Lasing Characteristics of Semiconductor Lasers
- Effects of Hydrogen Incorporation during Deposition by Sputtering for Amorphous Gallium Phosphide Films
- Semiconductor Lasers with Bent Guide of Planar Structure
- Estimation of Coupling Efficiency between Gain-Induced Guides
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- GaAs Rib-Waveguide Directional-Coupler Switch with Schottky Barriers : B-5: LASERS (2)
- GaAs-AlGaAs Half-Ring Laser Fabricated by Deep Zn Diffusion
- Amorphous GaAs Films by Molecular Beam Deposition