Properties of GaAs and GaP Amorphous-Film/Crystal Junctions
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概要
- 論文の詳細を見る
Amorphous thin films of GaAs, Gap, and gallium phosphide-hydrogen alloy (a-GaP(H)) were deposited on crystal GaAs by sputtering in argon or in a mixture of 90 mol.% hydrogen and 10 mol.% argon, and amorphous-film/crystal junctions were fabricated. The current-voltage characteristics of the junctions indicate that the a-GaAs and a-GaP films sputtered in argon are p-like and the a-GaP(H) film is intrinsic. An injection type electro-luminescence has been observed in the amorphous-film/crystal junctions. It is concluded from the spectra that minority carrier injection from the amorphous film to the crystal occurs and radiative recombination is observed in the side of the crystal. The quantum efficiency of the a-GaP(H)/c-GaAs surface-emitting diode is estimated to be 10^<-5>.
- 社団法人応用物理学会の論文
- 1979-09-05
著者
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Matsumoto Nobuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Matsumoto Nobuo
Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation
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KUMABE Kenji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kumabe Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation
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