Influence of Structure Parameters on Lasing Characteristics of Semiconductor Lasers
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概要
- 論文の詳細を見る
The influence of laser length l, stripe width w and facet reflectivity R on various lasing characteristics of AlGaAs-GaAs double hetero-structure semiconductor lasers is discussed experimentally, and the results are theoretically considered on the basis of the rate equations. It becomes clear that short cavity lasers with the high reflective facets are suitable for single longitudinal mode oscillation.
- 社団法人応用物理学会の論文
- 1979-02-05
著者
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Matsumoto Nobuo
Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation
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Kumabe Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph Ad Telephone Public Corporation
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