GaAs-AlGaAs Half-Ring Laser Fabricated by Deep Zn Diffusion
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-12-05
著者
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Kawaguchi Hitoshi
Musashino Electrical Communication Laboratory N.t.t
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory
関連論文
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Semiconductor Lasers with Bent Guide of Planar Structure
- Rapid Degradation in GaAs/AlGaAs Lasers Caused by Process-Induced Defects
- Evaluation of GaAs/AlGaAs Double-Heterostructure Wafers and Lasers by X-ray Topography
- X-Ray Topographic Observations of Defects on the Interface of GaAs-Al_xGa_1-xAs Epitaxial Wafers
- Single Thermal Scan DLTS Method
- Estimation of Coupling Efficiency between Gain-Induced Guides
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- GaAs Rib-Waveguide Directional-Coupler Switch with Schottky Barriers : B-5: LASERS (2)
- Observation of Etched Features of GaAs-Al_xGa_As DH Wafer
- Selective Liquid Phase Epitaxy of AlGaAs
- Small Area Planar Nb/Nb Josephson Tunnel Junction with High Current Density
- Etch Hills at the Heterointerface in GaAs-Al_xGa_1-xAs Epitaxial Wafers Prepared by LPE
- GaAs Core Embedded in Al_xGa_As Matrix
- GaAs-AlGaAs Half-Ring Laser Fabricated by Deep Zn Diffusion
- Defect Observations of GaAs-Al_xGa_1-xAs Heterostructures by Transmission Infrared Microscopy