Surface Emitting LED's for the 1.2-1.3 μm Wavelength with GaInAsP/InP Double Heterostructures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-09-05
著者
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Oe Kunishige
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ando Seigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sugiyama Koichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Oe Kunishige
Musashino Electrical Communication Laboratory
-
Sugiyama Koichi
Musashino Electrical Communication Laboratory
-
SUGIYAMA Koichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- Liquid Phase Epitaxial Growth of CuGaSe_2 on ZnSe
- Heat Treatment of Zn-Doped p-Type InP
- Heat Treatment of n-Type InP in Controlled Phosphorus Vapor
- Liquid-Phase Epitaxy of Ga_In_yAs_xSb_ Quaterary Alloys on GaSb
- lnSb_Bi_x Films Grown by Molecular Beam Epitaxy
- RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
- Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering
- Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method
- Surface Emitting LED's for the 1.2-1.3 μm Wavelength with GaInAsP/InP Double Heterostructures
- 1.3 μm CW Operation of GaInAsP/InP DH Diode Lasers at Room Tenmperature
- Short Cavity Semiconductor Laser
- Effects of Uniaxial Stress on the Double Heterostructure Lasers
- Vapor Phase Epitaxial Growth and Characterization of Ga_In_yAs_P_x Quaternary Alloys
- In_xGa_As Injection Lasers
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
- Etching of Al_xGa_As in Alkaline Solution
- Phase Diagram of the GaAs_Sb_x System
- Selective Liquid Phase Epitaxy of AlGaAs
- Molecular Beam Epitaxy of In-Doped CdTe