Effects of Uniaxial Stress on the Double Heterostructure Lasers
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概要
- 論文の詳細を見る
The effects of uniaxial stress, perpendicular to the junction, on broad contacting Al_yGa_<1-y>As-Al_xGa_<1-x>As-Al_yGa_<1-y>As (x=0〜0.17, y≃x+0.3) double heterostructure lasers have been investigated. Stress induced variation or the threshold current density depends on Al-content x in the active region, i.e., △J_<th><0 for x<0.1 and △J_<th>>0 for x>0.1. Such Al-content dependence of △J_<th> seems to arise from the change of carrier lifetime △τ/τ and radiative lifetime △τ^'/τ^', and it is given approximately by △J_<th>≃J<th>( △τ^'/mτ^'- △τ/τ) where m=2〜3.
- 社団法人応用物理学会の論文
- 1973-09-05
著者
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Sugiyama Koichi
Musashino Electrical Communication Laboratory
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Sugiyama Koichi
Musashino Electrical Communication Laboratory Musashino
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory Musashino
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