Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-10-05
著者
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Oe Kunishige
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kano Hiroyuki
Musashino Electrical Communication Laboratory N.t.t.
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Ando Seigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sugiyama Koichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Oe Kunishige
Musashino Electrical Communication Laboratory
-
Sugiyama Koichi
Musashino Electrical Communication Laboratory
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SUGIYAMA Koichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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- Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering
- Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method
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