Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature
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概要
- 論文の詳細を見る
Optical absorption spectra of MBE grown GaAs-AlAs superlattices with various thickness of the potential-well layer were measured in the temperature range up to 500 K. The excitonic absorption peak is observed even at a temperature of 500 K or higher. The broadening parameter Γ for the exciton peak was determined by a curve fitting. This parameter determines the temperature limit below which double absorption peaks due to heavy and light hole exciton are observed.
- 社団法人応用物理学会の論文
- 1984-10-20
著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Kobayashi Hideki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwamura Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Hideki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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