Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature

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概要

• 論文の詳細を見る

• Optical absorption spectra of MBE grown GaAs-AlAs superlattices with various thickness of the potential-well layer were measured in the temperature range up to 500 K. The excitonic absorption peak is observed even at a temperature of 500 K or higher. The broadening parameter Γ for the exciton peak was determined by a curve fitting. This parameter determines the temperature limit below which double absorption peaks due to heavy and light hole exciton are observed.

• 社団法人応用物理学会の論文
• 1984-10-20

著者

• OKAMOTO Hiroshi

  Musashino Electrical Communication Laboratory,NTT

• IWAMURA Hidetoshi

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation

• Kobayashi Hideki

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Iwamura Hidetoshi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Okamoto Hiroshi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kobayashi Hideki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
• Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
• Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
• Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
• A Segmented Electrode Multi-Quantum-Well Laser Diode
• Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
• Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
• Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
• Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
• Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
• Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
• Si and Sn Doping in Al_xGa_As Grown by MBE
• Near Room Temperature CW Operation at 1.70 μm of MBE Grown InGaAs/InP DH Lasers
• Properties of Molecular Beam Epitaxial In_xGa_As (X≈0.53) Layers Grown on InP Substrates
• Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature
• AlSb-GaSb and AlAs-GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy
• Surface Defects on MBE-Grown GaAs
• Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
• Some Design Considerations for Multi-Quantum-Well Lasers
• Optical Absorption of GaAs-AlGaAs Superlattice under Electric Field
• Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7-0.8 μm Wavelength Region

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