Quantitative Analysis of Na in Si with SIMS

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1978-09-05

著者

• Seki Masahiro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Kawashima Izumi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Oshima Masaharu

  Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

関連論文

• Surface Damage on Si Substrates Caused by Reactive Sputter Etching
• Charge Compensation of Insulators in Secondary Ion Mass Spectrometry (SIMS) Analysis
• Direct Observation of Lattice Image in Ultra-Fine Zinc Ferrite Particles Formed by the Coprecipitation Method
• An Investigation of the Properties of an Epitaxial Si Layeron a Substrate with a Buried SiO_2 Layer Formed by Oxygen-Ion Implantation
• Surface Defects on MBE-Grown GaAs
• Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
• Quantitative Analysis of Na in Si with SIMS
• Monitoring of Dry Etching Process of SiO_2 on Si by Using Mass Spectra
• Determination of Plasma Gas Temperatue during Reactive Sputter Etching
• Use of Mass Spectra for End Point Detection in Etching SiO_2 Films on Si
• Optical Spectroscopy in Reactive Sputter Etchingand and Its Application to Process Control

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