Use of Mass Spectra for End Point Detection in Etching SiO_2 Films on Si

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概要

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• A study has been made on a monitoring technique using mass spectra in etching SiO_2 films on Si substrates by reactive sputter etching. The ^<85>SiF_3^+ mass peak proved to be a more effective indicator for the monitoring than the ^<16>O^+ mass peak. The end point determined by this monitoring technique was confirmed by XPS surface analysis. The signal decrement ratio at the SiO_2-Si interface was denoted as a function of the etch rates of SiO_2 and Si, and the sample area. This decrement ratio shows good agreement with the experimental results at various etching powers. This monitoring technique, using the ^<85>SiF_3^+ mass peak, turns out to be more effective than emission spectrometry in the SiO_2-Si system from the viewpoints of signal-to-noise ratio and signal stability.

• 社団法人応用物理学会の論文
• 1981-07-05

著者

• Oshima Masaharu

  Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

関連論文

• Surface Damage on Si Substrates Caused by Reactive Sputter Etching
• Charge Compensation of Insulators in Secondary Ion Mass Spectrometry (SIMS) Analysis
• An Investigation of the Properties of an Epitaxial Si Layeron a Substrate with a Buried SiO_2 Layer Formed by Oxygen-Ion Implantation
• Quantitative Analysis of Na in Si with SIMS
• Monitoring of Dry Etching Process of SiO_2 on Si by Using Mass Spectra
• Determination of Plasma Gas Temperatue during Reactive Sputter Etching
• Use of Mass Spectra for End Point Detection in Etching SiO_2 Films on Si
• Optical Spectroscopy in Reactive Sputter Etchingand and Its Application to Process Control

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