Surface Damage on Si Substrates Caused by Reactive Sputter Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-05-05
著者
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Yabumoto Norikuni
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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OSHIMA Masaharu
Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation
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MICHIKAMI Osamu
Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation
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YOSHII Shizuka
Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation
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Yoshii Shizuka
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Michikami Osamu
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Oshima Masaharu
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
関連論文
- Surface Damage on Si Substrates Caused by Reactive Sputter Etching
- Charge Compensation of Insulators in Secondary Ion Mass Spectrometry (SIMS) Analysis
- An Investigation of the Properties of an Epitaxial Si Layeron a Substrate with a Buried SiO_2 Layer Formed by Oxygen-Ion Implantation
- Quantitative Analysis of Na in Si with SIMS
- Monitoring of Dry Etching Process of SiO_2 on Si by Using Mass Spectra
- Determination of Plasma Gas Temperatue during Reactive Sputter Etching
- Use of Mass Spectra for End Point Detection in Etching SiO_2 Films on Si
- Optical Spectroscopy in Reactive Sputter Etchingand and Its Application to Process Control