Optical Spectroscopy in Reactive Sputter Etchingand and Its Application to Process Control

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概要

• 論文の詳細を見る

• Optical emission spectra in the reactive sputter etching (RSE) of Si, SiO_2 and Si_3N_4 have been investigated using a spectrometer with a collimating system. Emission lines of Si, F, CN and N_2 reflecting the reaction products in the RSE of Si_3N_4 were observed. From the dependence of these lines on the etching conditions, the active species in RSE was found to be not F radicals,but CF_x ions. The applicability of these lines for use as the end point monitor was also investigated. In addition, the plasma gas temperature was determined by rotational analysis of plasma etching and RSE in C_2F_6 gas mixed with 0_2 or C_2H_4 gas.

• 社団法人応用物理学会の論文
• 1981-04-05

著者

• Oshima Masaharu

  Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

• OSHIMA Masaharu

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

関連論文

• Surface Damage on Si Substrates Caused by Reactive Sputter Etching
• Charge Compensation of Insulators in Secondary Ion Mass Spectrometry (SIMS) Analysis
• An Investigation of the Properties of an Epitaxial Si Layeron a Substrate with a Buried SiO_2 Layer Formed by Oxygen-Ion Implantation
• Quantitative Analysis of Na in Si with SIMS
• Monitoring of Dry Etching Process of SiO_2 on Si by Using Mass Spectra
• Determination of Plasma Gas Temperatue during Reactive Sputter Etching
• Use of Mass Spectra for End Point Detection in Etching SiO_2 Films on Si
• Optical Spectroscopy in Reactive Sputter Etchingand and Its Application to Process Control

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