An Investigation of the Properties of an Epitaxial Si Layeron a Substrate with a Buried SiO_2 Layer Formed by Oxygen-Ion Implantation

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概要

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• We have investigated the crystallographic properties of a silicon substrate with a buried SiO_2 layer formed by oxygen-ion implantation (^<16>O^+ dose: 1.2 to 2.4×10^<18>/cm^2) and an epitaxial silicon layer on the substrate using the step-by-step sample thinning technique. The surface silicon layer on the buried SiO_2 layer was found to have a dislocation-free single-crystalline silicon region, but with small precipitates of oxide. The epitaxial silicon layer grown on the surface silicon layer was found to have a high density of dislocations. The dislocation density was 2×10^9/cm^2 and was almost constant for a substrate oxygen dose above 0.6×10^<18>/cm^2. The dislocations are considered to be caused by precipitates in the surface silicon layer. However, the epitaxial layer had fairly high mobility and no stacking faults.

• 社団法人応用物理学会の論文
• 1982-06-20

著者

• Hayashi Takayoshi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• OSHIMA Masaharu

  Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation

• Homma Yoshikazu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Oshima Masaharu

  Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

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