Surface Microtopography and Compositional Change of Cesium-Ion-Bombarded Semiconductor Surfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Ishii Yoshikazu
Musashino Electrical Communication Laboratory Ntt
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Homma Yoshikazu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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OKAMOTO Hamao
Musashino Electrical Communication Laboratory, NTT
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Okamoto Hamao
Musashino Electrical Communication Laboratory Ntt
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Okamoto Hamao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Homma Yoshikazu
Musashino Electrical Communication Laboratory Ntt
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Homma Yoshikazu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Photo-Deep-Level Fourier Spectroscopy in Semi-Insulating Bulk Materials
- Charge Compensation of Insulators in Secondary Ion Mass Spectrometry (SIMS) Analysis
- Surface Microtopography and Compositional Change of Cesium-Ion-Bombarded Semiconductor Surfaces
- An Investigation of the Properties of an Epitaxial Si Layeron a Substrate with a Buried SiO_2 Layer Formed by Oxygen-Ion Implantation
- Formation of Abrupt Interfaces between Surface Silicon and Buried SinO_2 Layers by Very High Dose Oxygen-Ion Implantation