Formation of Abrupt Interfaces between Surface Silicon and Buried SinO_2 Layers by Very High Dose Oxygen-Ion Implantation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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Hayashi Takayoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hamao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Homma Yoshikazu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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