化学溶液法による(Bi, Nd)_4Ti_3O_<12> 強誘電体薄膜作製に及ぼすエキシマUV 照射効果

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Low-temperature processing of (Bi, Nd)_4Ti_3O_<12>(BNT) thin films was investigated by chemical solution depositionusing an excimer UV irradiation, and their ferroelectric properties, crystallinity and microstructure were characterized.BNT gel thin films were prepared on Pt(200 nm)/TiO_x(50 nm)/SiO_2/Si substrates by a spin-coating technique from alkoxideprecursor solutions. The excimer UV irradiation in O_2 atmosphere onto as-deposited BNT thin films was highly effectivein removing organic species of gel films, resulting in the decrease in the crystallization temperature and an increasein the crystallinity of the thin films. The UV-processed BNT films started to crystallize at 500°C and showed ahigh crystallinity and a high (117) preferred orientation for 550°C-annealed films. BNT thin films prepared at 550°C showed a homogeneous and dense microstructure with grain sizes of 150 nm. The excimer UV irradiation onto as-crystallizedBNT thin films was also effective in improving the ferroelectric properties of the thin films. BNT thin films preparedat 550°C using excimer UV lamp showed a well-saturated P–E hysteresis loop with a remnant polarization (P_r) of15 µC/cm^2 and a coercive electric field (E_c) of 95 kV/cm.
2006-03-18