Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy : Materials and Device Structures with Atomic Scale Resolution(<Special Section>Solid State Devices and Materials 1)
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概要
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In this study, a clean silicon surface is oxidized in a UHV chamber and the surface suboxide compositions are analyzed using in situ X-ray photoelectron spectroscopy. It is found that the predominant suboxides are Si_2O_3 and SiO irrespective of crystallographic orientations in the early stages of oxidation. This is interpreted in terms of a significant number of atomic steps existing on the clean Si surface. The observed chemical shift of O(1s) core level signal is explained by the partial charge transfer from the first and second nearest-neighbor silicon atoms to oxygen.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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Hirose Minoru
Process Development Division Fujitsu Limited
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OGURA Tsuyoshi
Department of Electrical Engineering University
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HAYASHI Tsukasa
Department of Electrical Engineering University
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OGURA Toru
Government Industrial Research Institute
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Takakura Masaru
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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