Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-02-20

著者

• OSAKA Yukio

  Department of Electrical Engineering, Hiroshima University

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• HAMASAKI Toshihiko

  Department of Electrical Engineering, Hiroshima University

• Ueda M

  Tokyo Inst. Technol. Tokyo Jpn

• Hirose Minoru

  Process Development Division Fujitsu Limited

• Ueda M

  Univ. Tokushima Tokushima Jpn

• Ueda M

  The Institute Of Scientific And Industrial Research Osaka University

• UEDA Masato

  Department of Applied Chemistry, Faculty of Engineering, Osaka Institute of Technology

• CHAYAHARA Akiyoshi

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• Chayahara Akiyoshi

  Department Of Electrical Engineering Hiroshima University

• Osaka Yukio

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Hamasaki T

  Okayama Univ. Science Okayama

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Ueda Masahiro

  Department Of Techniques Faculty Of Education Fukui University

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Hamasaki Toshihiko

  Department Of Electrical Engineering Hiroshima University

関連論文

• YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
• Microcrystallization in P-Doped Si:H Films at High Deposition Rate
• Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
• Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
• Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
• Luminescence from Thermally Oxidized Porous Silicon
• Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
• Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
• High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
• Amorphous Silicon Static Induction Transistor
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
• Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
• BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
• Chemical Stability of HF-Treated Si(111) Surfaces
• The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
• Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
• In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Modeling of Soft Breakdown in Ultrathin Gate Oxides
• Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
• Phonon Interaction in the Luminescence of Porous Silicon
• Reabsorption of Visible Luminescence in Porous Si
• Visible Photoluminescence from Porous Silicon
• Exciton Structure in Alkali-Halide Crystals
• Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
• Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
• Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
• Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
• Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
• Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
• Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
• Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
• Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
• Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
• Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
• A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
• Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
• Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
• Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
• Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
• Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
• Reflectance spectra of BN Materials in the Vacuum Ultraviolet
• Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
• Photoluminescence from Si Network in SiO_2-Doped Si Films
• Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
• Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
• Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
• Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
• Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
• Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
• Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
• DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
• Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
• Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
• Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
• CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
• Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
• Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
• Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
• Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
• Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
• Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
• Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
• Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
• Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
• Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
• Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
• Current Transport in Doped Polycrystalline Silicon
• Note on Localized States in Amorphous Germanium

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