Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-05-20
著者
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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NASU Hiroyuki
Department of Chemistry for Materials, Faculty of Engineering, Mie University
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Osaka Y
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
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Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Nasu Hiroyuki
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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TOKUMITSU Yoji
Department of Electrical Engineering, Hiroshima University
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Tsunetomo K
Nippon Sheet Glass Co. Ltd. Ibaraki Jpn
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TSUNETOMO Keiji
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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Tokumitsu Yoji
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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OSAKA Yukio
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
関連論文
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- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Amorphous Silicon Static Induction Transistor
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- Preparation and Magnetooptical Properties of Cd_Mn_xTe Microcrystal-Doped SiO_2 Glass Thin Films
- Exciton Structure in Alkali-Halide Crystals
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Red-to-Yellow Electroluminescence from CdSe Microcrystal-Doped Indium Tin Oxide Thin Films
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- Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
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- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
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- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- The Influence of Matrix on Quantum Size Confinement of Semiconductor Microcrystals Doped in Glass Thin Films Prepared by RF-Sputtering
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- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
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- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
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- Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique
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- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
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- Current Transport in Doped Polycrystalline Silicon
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