Crystalline Qualities and Critical Current Densities of As-Grown Ba_2YCu_3O_x Thin Films on Silicon with Buffer Layers
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-06-20
著者
-
明連 広昭
東北大通研
-
Myoren Hiroaki
Faculty Of Engineering Saitama University
-
NISHIYAMA Fumitaka
Faculty of Engineering, Hiroshima University
-
Nishiyama Yukio
Faculty Of Engineering Hiroshima University
-
Nishiyama Yukio
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
-
Nishiyama Fumitaka
Faculty Of Engineering Hiroshima University
-
MIYAMOTO Naokazu
Faculty of Engineering, Hiroshima University
-
KAI Yasuaki
Faculty of Engineering, Hiroshima University
-
YAMANAKA Yasushi
Faculty of Engineering, Hiroshima University
-
OSAKA Yukio
Faculty of Engineering, Hiroshima University
-
Miyamoto N
Spring-8 Service Co. Ltd.
-
Osaka Y
Department Of Electrical Engineering Hiroshima-denki Institute Of Technology
-
Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
-
Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
-
Kai Yasuaki
Faculty Of Engineering Hiroshima University
-
Osaka Yukio
Faculty Of Engineering Hiroshima University
-
Yamanaka Yasushi
Faculty Of Engineering Hiroshima University
-
OSAKA Yukio
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
-
MIYAMOTO Naokazu
SPring-8 Service Co., Ltd.
関連論文
- YBCO/CeO_2/Al_2O_3薄膜のエピ成長機構とAFM観察
- 2008 Applied Superconductivity Conference [ASC2008]
- Enhanced AC Josephson Effect in YBa_2Cu_3O_ Junctions Driven by Two RF Sources
- 角度磁場下におけるYBCO薄膜の臨界電流
- MgO基板上への高温超伝導ランプ型接合の作製とミリ波・サブミリ波特性
- テラヘルツ帯におけるYBCO粒界型ジョセフソン接合の応答特性
- High Frequency Responses of YBa_2Cu_3O_ Josephson Junctions on Si Substrates Fabricated by Focused Electron Beam Irradiation
- 高温超伝導ジョセフソン接合のテラヘルツ帯電磁波応用
- Anisotropic Resistivity of In-Plane-Aligned La_Sr_xCuO_4(100) Films on LaSrGaO_4(100) Substrates
- YBCO粒界ジョセフソン接合の固有雑音温度とその動作周波数
- 電子ビーム照射によるSi基板上YBCO Josephson接合の高周波特性
- 低雑音YBCO dc-SQUIDの設計
- YBCOジョセフソンデバイスのホワイトノイズ特性
- Electric Field Effects on YBa_2Cu_3O_ Grain Boundary Josephson Junctions
- 高温超伝導体のSQUIDへの応用
- 基板,バッファ層
- YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
- 7th European Conference on Applied Superconductivity [EUCAS2005]
- MgO基板上への高温超伝導ランプ型接合の作製とミリ波・サブミリ波特性
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
- Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
- Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
- Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
- Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
- High Quality Silicon Epitaxy at 500℃ using Silane Gas-Source Molecular Beam Technique
- Design of a 4×4 Banyan Network Switch with a Dual-Buffer Structure Using SFQ Logic Circuits(Special Issue on Superconductor Digital/Analog Circuit Technologies)
- Amorphous Silicon Static Induction Transistor
- Medium-Energy Ion Spectroscopy Using Ion Implanter
- Exciton Structure in Alkali-Halide Crystals
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- In Situ Observation of Photon-Stimulated Hydrogen Removal on a HF-Passivated Si(111) Surface by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation
- Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light
- Evaluation of Lattice Strain in Silicon Substrate Beneath Aluminum Conductor Film Using High-Resolution X-Ray Microbeam Diffractometry
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
- Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
- Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
- Crystalline Qualities and Critical Current Densities of As-Grown Ba_2YCu_3O_x Thin Films on Silicon with Buffer Layers
- Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
- 500-nm-Resolution 10 keV X-Ray Imaging Transmission Microscope with Tantalum Phase Zone Plates
- A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
- Photoluminescence from Si Network in SiO_2-Doped Si Films
- Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
- Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
- Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
- Suppression of the Josephson Current in Normal-Distribution-Shaped Tunnel Junctions
- High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- Modification of Radiosensitivity by Low Dose Irradiation
- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
- CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
- Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
- Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
- Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
- Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
- Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
- Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
- Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
- Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
- 超伝導が応用物理にもたらすもの
- Fiske Steps of Josephson Tunnel Junctions Formed with Normal-Distribution Functi
- Proposal of a Digital Double Relaxation Oscillation SQUID(Special Issue on Superconductive Electronics)
- 社会を変革するセンサ技術
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
- Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
- Magnetic Field Dependence of Critical Current Density in Superconducting Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O Films (Special Issue on High-Temperature Superconducting Electronics)
- Elastic Properties of Human in Vivo Triceps Brachii Tendon
- High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system