Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy

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Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500-800℃
Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
EPR Study on Cr^ Distribution in LEC GaAs: Cr Wafers
Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
Infrared Study of SiH_4-Adsorbed Si(100) Surfaces : Observation and Mode Assignment of New Peaks : Semiconductors
Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
High Quality Silicon Epitaxy at 500℃ using Silane Gas-Source Molecular Beam Technique
In Situ Observation of Photon-Stimulated Hydrogen Removal on a HF-Passivated Si(111) Surface by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation
Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light
Examination of Surface-Roughness of Silicon Crystals by Double-Crystal X-Ray Topography
Evaluation of Lattice Strain in Silicon Substrate Beneath Aluminum Conductor Film Using High-Resolution X-Ray Microbeam Diffractometry
Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
Crystalline Qualities and Critical Current Densities of As-Grown Ba_2YCu_3O_x Thin Films on Silicon with Buffer Layers
Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
Microstructure of Fe-B-Si Alloy Surface Layers Produced by Laser-Quenching
500-nm-Resolution 10 keV X-Ray Imaging Transmission Microscope with Tantalum Phase Zone Plates
Enhancement and Suppression Effect of Carbon Atoms on Oxygen Aggregation and New Donor Formation in Silicon Crystals Preannealed at Low Temperatures
Lattice Strain of Selectively Grown Silicon Epitaxial Layer
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
A Quantum Flux Parametron (QFP) 12-Bit Shift Register Capable of Stable Microwave Frequency Operation
Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
High-Frequency Coherent Phonons in Graphene on Silicon
Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
Epitaxial Growth Processes of Graphene on Silicon Substrates
Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
Two-Dimensional Growth and Decomposition of Initial Thermal SiO_2 Layer on Si(100)
Outdiffusion and Subsequent Desorption of Volatile SiO Molecules during Annealing of Thick SiO_2 Films in Vacuum
Anomalous Diffusion of Phosphorus into Silicon
Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
Photon-Stimulated Desorption of H+ Ions from Oxidized Si(111) Surfaces
Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I)—Optimization of the HF Treatment—
Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)—in situ UVOC

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