Anomalous Diffusion of Phosphorus into Silicon
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概要
- 論文の詳細を見る
Lattice strains induced by diffusion of phosphorus, arsenic, antimony and tin into silicon are studied through an X-ray double crystal spectrometer. This quantitative experiment gives that the amount of lattice strain induced by diffusion of impurity depends both on the size of impurity atoms diffused into silicon and on the impurity concentration, which agrees with the equation by S. Prussin et al. It also leads to the result as follows; the lattice strain in the diffused layer is compensated in the case of the phosphorus content less than 4×10^<20> atoms/cm^3 by diffusing both tin, whose atomic radius is larger than that of silicon, and phosphorus with smaller radius. Anomaly in the diffraction pattern is also observed in the case of anomalous diffusion of phosphorus under high vapor pressure of phosphorus.
- 社団法人応用物理学会の論文
- 1970-03-05
著者
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Nishizawa Jun-ichi
Research Institute Of Electrical Cammunication Tohoku University
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MIYAMOTO Nobuo
Research Institute of Electrical Communication, Tohoku University
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Miyamoto Nobuo
Research Institute Of Electrical Communication Tohoku University
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Miyamoto Nobuo
Research Development Corporation Of Japan (jrdc)
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Yagi Kunihiro
Research Institute Of Electrical Communication Tohoku University
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