Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-05-20

著者

• Niwano Michio

  Research Institute of Electrical Communication (RIEC), Tohoku University

• Niwano M

  Tohoku Univ. Sendai Jpn

• Suemitsu M

  Tohoku Univ. Sendai Jpn

• Suemitsu Maki

  Research Institute Of Electrical Communication Tohoku University

• MIYAMOTO Nobuo

  Research Institute of Electrical Communication, Tohoku University

• MANAI Akira

  Takasaki Works, Hitachi Ltd.

• NAKAMURA Hirofumi

  Space Systems Division, Hitachi Ltd.

• Miyamoto N

  Spring-8 Service Co. Ltd.

• Niwano M

  Research Institute Of Electrical Communication Tohoku University

• Niwano Michio

  Research Institute Of Electrical Communication (riec) Tohoku University

• Manai Akira

  Takasaki Works Hitachi Ltd.

• Miyamoto Nobuo

  Research Development Corporation Of Japan (jrdc)

• Nakamura Hirofumi

  Space Systems Division Hitachi Ltd.

• MIYAMOTO Naokazu

  SPring-8 Service Co., Ltd.

• Suemitsu Maki

  Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

関連論文

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• In-Situ Detection and Classification of DNA by Porous Alumina Filter in Conjugation with Infrared Absorption Spectroscopy
• Coordination of Carboxylate on Metal Nanoparticles Characterized by Fourier Transform Infrared Spectroscopy
• In-Situ Surface Infrared Study of DNA Attachment and Hybridization at Si Surfaces
• Optical Properties of CeO_2 Crystal in the Photon Energy Range of 2.5-40 eV
• Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500-800℃
• Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
• Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
• Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
• EPR Study on Cr^ Distribution in LEC GaAs: Cr Wafers
• Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
• Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
• Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
• Infrared Study of SiH_4-Adsorbed Si(100) Surfaces : Observation and Mode Assignment of New Peaks : Semiconductors
• Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
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• Si-Fullerene Compounds Produced by Controlling Spatial Structure of an Arc-Discharge Plasma
• Carrier Injection Characteristics in Organic Field Effect Transistors Studied by Displacement Current Measurement
• Soft X-Ray Optical Constants: Pt, Ag, and Cu : Techniques, Instrumentations nad Measurement
• In Situ Observation of Photon-Stimulated Hydrogen Removal on a HF-Passivated Si(111) Surface by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation
• Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light
• Examination of Surface-Roughness of Silicon Crystals by Double-Crystal X-Ray Topography
• Investigation of Growth Process of Carbon Nanotubes on Cobalt Catalysts using Infrared Absorption Spectroscopy(Session 8B Emerging Devices and Technologies II,AWAD2006)
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• Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
• 500-nm-Resolution 10 keV X-Ray Imaging Transmission Microscope with Tantalum Phase Zone Plates
• Plasma oxidation process of silicon surfaces investigated by infrared spectroscopy
• Enhancement and Suppression Effect of Carbon Atoms on Oxygen Aggregation and New Donor Formation in Silicon Crystals Preannealed at Low Temperatures
• Lattice Strain of Selectively Grown Silicon Epitaxial Layer
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• Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
• High-Frequency Coherent Phonons in Graphene on Silicon
• Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
• Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
• Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
• Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
• Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
• Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
• Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
• Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
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• Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
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• Outdiffusion and Subsequent Desorption of Volatile SiO Molecules during Annealing of Thick SiO_2 Films in Vacuum
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• Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
• Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
• Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
• In situ Study of DNA Attachment and Hybridization at Silicon Surfaces by Infrared Absorption Spectroscopy
• Photon-Stimulated Desorption of H+ Ions from Oxidized Si(111) Surfaces
• Carrier Injection Characteristics in Organic Field Effect Transistors Studied by Displacement Current Measurement
• Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I)—Optimization of the HF Treatment—
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• Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)—in situ UVOC

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