Photoinduced Doping of Organic Field Effect Transistors Studied by Displacement Current Measurement and Infrared Absorption Spectroscopy in Multiple Internal Reflection Geometry
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概要
- 論文の詳細を見る
In order to investigate a doping mechanism in organic semiconductors, we have studied the influence of oxygen exposure on pentacene and poly(3-hexylthiophene) (P3HT) field effect transistor (FET) using displacement current measurement (DCM). The DCM results revealed that the oxygen doping effect is small in the dark condition, but is much enhanced by light illumination (photoinduced doping). From the result of infrared reflection absorption in the multiple internal reflection geometry (MIR-IRAS) for P3HT film, we conclude that the charge-transfer reaction between P3HT molecule and O2 molecules is accelerated by the light illumination.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
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Ogawa Satoshi
Research Institute Of Electrical Communication (riec) Tohoku University
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Niwano Michio
Research Institute Of Electrical Communication (riec) Tohoku University
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Kimura Yasuo
Research Institute Of Electrical Communication (riec) Tohoku University
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Niwano Michio
Research Institute of Electrical Communication (RIEC), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ishii Hisao
Research Institute of Electrical Communication (RIEC), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Naijo Tatsuo
Research Institute of Electrical Communication (RIEC), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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