Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
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概要
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We have deposited silicon/nitrogen-incorporated diamond-like carbon (Si--N-DLC) films by radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using methane (CH4), argon (Ar), and hexamethyldisilazane {[(CH3)3Si]2NH} as the Si and N source, and investigated the structure and the mechanical and tribological properties of the films. We compared the properties of the Si--N-DLC films with those of the Si-incorporated DLC (Si-DLC) films prepared by PECVD using monomethylsilane (CH3SiH3) as the Si source. It was found that the N incorporation together with Si into DLC was effective in further decreasing the internal stress and increasing the adhesion strength. The friction coefficients of the Si--N-DLC films containing 4.0% N or less were as low as those of the Si-DLC films. We also found that the Si--N-DLC film containing 10.0% Si and 4.0% N had a higher wear resistance than the Si-DLC film containing 10.8% Si. The wear rate was comparable to that of the undoped DLC film.
- 2012-01-25
著者
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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Enta Yoshiharu
Graduate School Of Science And Technology Hirosaki University
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Nakazawa Hideki
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Enta Yoshiharu
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Abe Toshimi
Department of Electronics and Intelligent System, Tohoku Institute of Technology, Sendai 982-8577, Japan
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Miura Soushi
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Kamata Ryosuke
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Okuno Saori
Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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