Void and Nanostructure Formations during Thermal Decomposition of 20-nm-Thick Silicon Oxide Layer on Si(100)

スポンサーリンク

概要

• 論文の詳細を見る

• We investigate the thermal decomposition of 20-nm-thick silicon oxide layers on Si(100) at a temperature of 1050 °C in vacuum by X-ray photoelectron spectroscopy, scanning Auger electron microscopy, and atomic force microscopy. Time evolutions of chemical-shift components in Si 2p core-level spectra are analyzed with the SiO<inf>2</inf>-decomposition model based on void formation. The experimental data can be reproduced well if the void area is proportional to the square of the annealing time, being consistent with the model in which the reaction at the void periphery is the rate-limiting step for void growth. Microscopic images show that the void periphery is square with rounded corners, and many silicon nanostructures are formed inside the void. These observations reflect reaction processes of the thermal decomposition of the silicon oxide layer.

• 2013-03-25

著者

• Enta Yoshiharu

  Graduate School Of Science And Technology Hirosaki University

• Nagai Takayuki

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Ogawa Kano

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

関連論文

• Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
• Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
• Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
• Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
• Void and Nanostructure Formations during Thermal Decomposition of 20-nm-Thick Silicon Oxide Layer on Si(100)

スポンサーリンク