Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)

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概要

• 論文の詳細を見る

著者

• Teraoka Yuden

  Japan Atomic Energy Agency

• YOSHIGOE Akitaka

  Japan Atomic Energy Agency

• Fukidome Hirokazu

  Research Center For Photoenergetics Of Organic Materials Osaka University

• Imaizumi Kei

  Research Institute Of Electrical Communications Tohoku University

• Handa Hiroyuki

  Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Takahashi Ryota

  Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Abe Shunsuke

  Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Suemitsu Maki

  Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

• Imaizumi Kei

  Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Handa Hiroyuki

  Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

関連論文

• Si-doping for the Protection of Hydrogenated Diamond-like Carbon Films in a Simulated Atomic Oxygen Environment in Low Earth Orbit
• Atomic Layer Fluorination of Highly Oriented Pyrolytic Graphite using Hyperthermal Atomic Fluorine Beam
• Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure
• Real-time monitoring of initial oxidation of Si(110)-16×2 surface by Si 2p Photoemission spectroscopy
• Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O1s Photoemission Spectroscopy Using Synchrotron Radiation
• Synchrotron Radiation Photoelectron Emission Study of SiO_2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
• Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500-800℃
• Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
• Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
• Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
• EPR Study on Cr^ Distribution in LEC GaAs: Cr Wafers
• Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
• Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
• Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
• Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
• High Quality Silicon Epitaxy at 500℃ using Silane Gas-Source Molecular Beam Technique
• Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
• Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
• High-Frequency Coherent Phonons in Graphene on Silicon
• Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
• Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
• Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
• Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
• Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
• Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
• Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
• Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
• Epitaxial Growth Processes of Graphene on Silicon Substrates
• Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
• A Very Simple Method of Flattening Si(111) Surface at an Atomic Level Using Oxygen-Free Water
• Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
• A Chemical-State-Specific Study of the Composition of the Natural Oxide Layer of V_Cr_Ti_
• Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy
• Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
• Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
• Real-Time Observation of Initial Thermal Oxidation on Si(110)-$16\times 2$ Surfaces by O 1s Photoemission Spectroscopy Using Synchrotron Radiation
• Synchrotron Radiation Photoelectron Emission Study of SiO2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
• Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
• Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO
• Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al
• Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I)—Optimization of the HF Treatment—
• Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)—in situ UVOC
• Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy

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