Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure
スポンサーリンク
概要
著者
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Teraoka Yuden
Japan Atomic Energy Agency
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Teraoka Yuden
Japan Atomic Energy Agency Hyogo Jpn
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YOSHIGOE Akitaka
Japan Atomic Energy Agency
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Tagawa Masahito
Graduate School Of Engineering Kobe University
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Yokota Kumiko
Graduate School Of Engineering Kobe University
関連論文
- Si-doping for the Protection of Hydrogenated Diamond-like Carbon Films in a Simulated Atomic Oxygen Environment in Low Earth Orbit
- Atomic Layer Fluorination of Highly Oriented Pyrolytic Graphite using Hyperthermal Atomic Fluorine Beam
- Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure
- Real-time monitoring of initial oxidation of Si(110)-16×2 surface by Si 2p Photoemission spectroscopy
- Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O1s Photoemission Spectroscopy Using Synchrotron Radiation
- Synchrotron Radiation Photoelectron Emission Study of SiO_2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
- Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
- A Chemical-State-Specific Study of the Composition of the Natural Oxide Layer of V_Cr_Ti_
- Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy
- Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
- Real-Time Observation of Initial Thermal Oxidation on Si(110)-$16\times 2$ Surfaces by O 1s Photoemission Spectroscopy Using Synchrotron Radiation
- Synchrotron Radiation Photoelectron Emission Study of SiO2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
- Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
- Relative Electron Impact Ionization Probabilities of O, O
- Photoemission Study of Hydrogenated Amorphous Carbon Thin Films as a Function of Annealing Temperature
- Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO
- Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al