Si-doping for the Protection of Hydrogenated Diamond-like Carbon Films in a Simulated Atomic Oxygen Environment in Low Earth Orbit
スポンサーリンク
概要
- 論文の詳細を見る
The effect of hyperthermal atomic oxygen (AO) exposure on a surface property of Si-doped DLC was investigated. Two types of DLC were tested which contain Si atoms approximately 10 at% and 20 at%. Surface analytical results of high-resolution x-ray photoelectron spectroscopy using synchrotron radiation (synchrotron radiation photoemission spectroscopy; SR-PES) as well as Rutherford backscattering spectroscopy (RBS) have been used for characterization of the AO-exposed Si-doped DLC. It was identified by SR-PES that the SiO2 layer was formed by the hyperthermal AO exposure at the Si-doped DLC surface. RBS data indicates that AO exposure leads to severe thickness loss on the non-dope DLC, in contrast, SiO2 layer formed by the hyperthermal atomic oxygen reaction at the Si-doped DLC protects the DLC underneath the SiO2 layer.
著者
-
Teraoka Yuden
Japan Atomic Energy Agency
-
Teraoka Yuden
Synchrotron Radiation Research Center Japan Atomic Energy Research Institute (jaeri)
-
TAGAWA Masahito
Graduate School of Engineering, Kobe University
-
YOKOTA Kumiko
Graduate School of Engineering, Kobe University
-
KITAMURA Akira
Graduate School of Maritime Sciences, Kobe University
-
MATSUMOTO Koji
Aerospace Research and Development Directorate, Japan Aerospace Exploration Agency
-
YOSHIGOE Akitaka
Synchrotron Radiation Research Center, Japan Atomic Energy Agency
-
FONTAINE Julien
Laboratory of Tribology and Systems, Ecole Centrale de Lyon
-
BELIN Michel
Laboratory of Tribology and Systems, Ecole Centrale de Lyon
関連論文
- Si-doping for the Protection of Hydrogenated Diamond-like Carbon Films in a Simulated Atomic Oxygen Environment in Low Earth Orbit
- Atomic Layer Fluorination of Highly Oriented Pyrolytic Graphite using Hyperthermal Atomic Fluorine Beam
- Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure
- Real-time monitoring of initial oxidation of Si(110)-16×2 surface by Si 2p Photoemission spectroscopy
- Real-time monitoring of initial oxidation of Si(110)-16×2 surface by Si 2p Photoemission spectroscopy
- Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O1s Photoemission Spectroscopy Using Synchrotron Radiation
- Effects of Long-Term Irradiation with LEO Environment Effective Factors on Properties of Solid Lubricant
- Synchrotron Radiation Photoelectron Emission Study of SiO_2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
- Real-Time Observation of Initial Stage on Si(001) Oxidation Studied by O-1s Photoemission Spectroscopy Using Synchrotron Radiation
- SiO Mass Spectrometry and Si-2p Photoemission Spectroscopy for the Study of Oxidation Reaction Dynamics of Si(001) Surface by Supersonic O_2 Molecular Beams under 1000 K
- Real-Time Monitoring of Initial Thermal Oxidation on Si(001) Surfaces by Synchrotron Radiation Photoemission Spectroscopy
- In situ analysis using high resolution synchrotron radiation photoemission spectroscopy for initial oxidation of H_2O pre-adsorbed Si(001) surfaces induced by supersonic O_2 molecular beams at room temperature
- Production of Sub-MeV Positive Gold Ion Beams with Various Gas Targets to Improve the Tandem Accelerator of the LHD-HIBP
- Initial Oxidation of Si(001)Induced by the Translational Kinetic Energy of O_2 Supersonic Molecular Beams
- Decomposition of Halide Compounds by Nonequilibrium Discharge
- Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
- A study of the Ion Beam craft poloymerization method : observation of graft chains in grafted polimers
- A Chemical-State-Specific Study of the Composition of the Natural Oxide Layer of V_Cr_Ti_
- A study of the ion beam graft polymerization method
- Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy
- Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
- Measurements and Analysis of Neutron Flux Distribution in UTR-KINKI
- Real-Time Observation of Initial Thermal Oxidation on Si(110)-$16\times 2$ Surfaces by O 1s Photoemission Spectroscopy Using Synchrotron Radiation
- Synchrotron Radiation Photoelectron Emission Study of SiO2 Film Formed by Hyperthermal O-Atom Beam at Room Temperature
- Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
- Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO
- Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al