Initial Oxidation of Si(001)Induced by the Translational Kinetic Energy of O_2 Supersonic Molecular Beams
スポンサーリンク
概要
- 論文の詳細を見る
The influence of the variation of up to 3.0eV in the incident translational kinetic energy of O_2(E_t)on the chemisorption of O_2 onto Si(001)surfaces was studied by using the supersonic molecular beam(SSMB), X-ray photoemission spectroscopy(XPS), O_2 molecular scattering and desorbed SiO detection techniques. Under passive oxidation conditions at room temperature, the amount of saturated oxygen on the Si(001)surface was senhanced in concomitant with an increase in the translational kinetic energy of O_2. Threshold energies, corresponding to potential energy barriers for the direct oxidation reaction, are clearly observed at E_t=1.0eV and E_t=2.6eV. These threshold energies have been assigned to backbond oxidation of the Si dimer atoms and oxidation between the second and the third Si layers, respectively. Futhermore, at substrate temperature of 700°C, the relative desorption rate of SiO was increased when the translational kinetic energy of O_2 was greater than E_t=1.0eV. These results suggest that the oxidized Si dimer backbond is the precursor for the desorbed SiO.
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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Teraoka Yuden
Synchrotron Radiation Research Center Japan Atomic Energy Research Institute (jaeri)
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Yoshigoe Akitaka
Synchrotron Radiation Research Center Japan Atomic Energy Agency
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Sano Mutsumi
Synchrotron Radiation Research Cener Japan Atomic Energy Research Institute(jaeri)
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Teraoka Yuden
Synchrotron Radiation Research Cener Japan Atomic Energy Research Institute(jaeri)
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Yoshigoe Akitaka
Synchrotron Radiation Research Cener Japan Atomic Energy Research Institute(jaeri)
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