Dissociative Adsorption of Nitric Oxide on Si(111)-($7\times7$) Surface

概要

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The dissociative adsorption of nitric oxide (NO) on a Si(111)-($7\times7$) surface between 330 and 600 K was investigated using X-ray photoelectron spectroscopy (XPS). The uptake curves of both the N and O atoms as functions of NO exposure revealed a prominent temperature dependence for the dissociative adsorption of NO on a Si(111)-($7\times7$) surface. The decrease in the rates of the dissociative adsorption of NO with an increase in surface temperature ($T_{\text{s}}$) suggests that a precursor exists. Additionally, the number ratio of N atoms to O atoms on the surface (N/O ratio) changed from 1.0 ($T_{\text{s}} = 330$ K) to 1.2 ($T_{\text{s}} = 600$ K). This increase in N/O ratio with an increase in $T_{\text{s}}$ suggests that an additional reaction path becomes available at higher $T_{\text{s}}$.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-03-25