Real-Time Monitoring of Initial Thermal Oxidation on Si(001) Surfaces by Synchrotron Radiation Photoemission Spectroscopy

概要

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The thermal oxidation of Si(001) surfaces at 860 K, 895 K, 945 K and 1000 K under the O2 pressure of $1\times 10^{-4}$ Pa has been investigated by time-resolved photoemission measurements with synchrotron radiation. Based on time evolution analyses by reaction kinetics models, it was found that the oxidation at 860 K, 895 K and 945 K has progressed with the Langmuir adsorption type, whereas the oxidation at 1000 K has showed the character of the two-dimensional island growth involving SiO desorption. The oxidation rates increased with increasing surface temperature in the passive oxidation condition. The time evolution of each Si oxidation state (Sin+: $n = 1$, 2, 3, 4) derived from the Si-2p core-level shifts has also been analyzed. The results revealed that the thermal energy contributed to the migration process of the adsorbed oxygen and the emission of the bulk silicon atoms. Thus, the fraction of the Si4+ bonding state, i.e. SiO2 structure, was increased.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-06-15