Real-Time Observation of Initial Stage on Si(001) Oxidation Studied by O-1s Photoemission Spectroscopy Using Synchrotron Radiation
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概要
- 論文の詳細を見る
The real-time photoemission measurements of the initial thermal oxidation on the Si(001) surface with O2 gas ($1\times 10^{-4}$ Pa) at the surface temperatures of 860, 895, 945 and 1000 K have been performed by using synchrotron radiation. In order to study the oxide-layer growth mode depending on the surface temperature, the time evolution of integrated peak area intensity of O-1s photoemission spectra was analyzed on the basis of the Langmuir-type and the auto-catalytic reaction kinetics models. It was found that the oxidation at 860, 895 and 945 K has progressed with the Langmuir-type adsorption. On the other hand, the oxidation at 1000 K has shown the characteristic of the auto-catalytic growth. We have succeeded in analyzing the reaction kinetics of thermal Si(001) oxidation by using the real-time in-situ O-1s photoemission measurements.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Teraoka Yuden
Synchrotron Radiation Research Cener Japan Atomic Energy Research Institute(jaeri)
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Yoshigoe Akitaka
Synchrotron Radiation Research Cener Japan Atomic Energy Research Institute(jaeri)
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Moritani Kousuke
Synchrotron Radiation Research Center Japan Atomic Energy Research Institute
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Moritani Kousuke
Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute (JAERI), SPring-8, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo, 679-5148 Japan
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Yoshigoe Akitaka
Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute (JAERI), SPring-8, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo, 679-5148 Japan
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