Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO
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概要
- 論文の詳細を見る
To experimentally verify the Si oxidation reaction model mediated by point defect (emitted Si atoms and their vacancies) generation due to oxidation-induced strain, real-time photoelectron spectroscopy using synchrotron radiation was employed to simultaneously evaluate the amount of oxidation-induced strained Si atoms at the SiO<inf>2</inf>/Si interface, oxidation state, and oxidation rate during oxidation on n-type Si(001) surfaces with O<inf>2</inf>gas. It is found that both the oxidation rate and the amount of strained Si atoms at the completion of the first-oxide-layer growth decrease gradually with increasing temperature from 300 to 550 °C, where the oxide grows in the Langmuir-type adsorption manner. It is found that the interface strain and oxidation rate have a strong correlation. We discuss the reason for the oxide coverage and oxidation temperature dependences of interfacial strain from the viewpoint of the behavior of adsorbed oxygen during the first-oxide-layer growth.
- The Japan Society of Applied Physicsの論文
- 2013-11-25
著者
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Teraoka Yuden
Japan Atomic Energy Agency
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YOSHIGOE Akitaka
Japan Atomic Energy Agency
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Takakuwa Yuji
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Ogawa Shuichi
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Takakuwa Yuji
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Tang Jiayi
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Ishidzuka Shinji
Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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