Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-01
著者
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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MIYAMOTO Nobuo
Research Institute of Electrical Communication, Tohoku University
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TERADA Koji
Research Institute of Electrical Communication, Tohoku University
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NISHIJIMA Masaaki
Research Institute of Electrical Communication, Tohoku University
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Terada Koji
Research Institute Of Electrical Communication Tohoku University
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Miyamoto Nobuo
Research Development Corporation Of Japan (jrdc)
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Nishijima Masaaki
Research Institute Of Electrical Communication Tohoku University
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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- Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
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