Enhancement and Suppression Effect of Carbon Atoms on Oxygen Aggregation and New Donor Formation in Silicon Crystals Preannealed at Low Temperatures
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概要
- 論文の詳細を見る
- 1995-09-15
著者
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Miyamoto Nobuo
Research Development Corporation Of Japan (jrdc)
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Yamanaka Hideki
Memc Division Huls Japan Ltd.
関連論文
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- Examination of Surface-Roughness of Silicon Crystals by Double-Crystal X-Ray Topography
- Nueleatioru of Oxygen Precipitates during Cooling Processes in Czochralski Silicon
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- Lattice Strain of Selectively Grown Silicon Epitaxial Layer
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- Two-Dimensional Growth and Decomposition of Initial Thermal SiO_2 Layer on Si(100)
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- Formation Kinetics and Infrared Absorption of Carbon-Oxygen Complexes in Czochralski Silicon
- Anomalous Diffusion of Phosphorus into Silicon
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- Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I)—Optimization of the HF Treatment—
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