Formation Kinetics and Infrared Absorption of Carbon-Oxygen Complexes in Czochralski Silicon

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概要

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• The study of nucleation kinetics and infrared absorption measured at 8 K provides the models of nucleation reactions of carbon-oxygen complexes formed during annealing at 500℃ and 650℃. We have, for the first time, found that the reduction ratio of interstitial oxygen in the 450-650℃ range obeys the Johnson-Mehl-Avrami equation with a reaction rate constant expressed by k=83.9 exp (-1.0 eV/k_BT) cm^<-1>. Nucleation at 650℃ follows first-order kinetics while that at 500℃ follows third-order kinetics. The 1104-cm^<-1> band due to carbon-oxygen pairs formed above 1000℃ decreases throughout annealing at 650℃, whereas it increases upon annealing at 500℃ for up to 64 h. Five bands appear at 1026, 1052, 1099, 1107.5 and 1112 cm^<-1>, and their intensities increase through-out the annealing process at 500℃ for up to 64 h and remain constant from 64 to 128 h, and decrease beyond 128 h. From these findings, carbon-oxygen complexes formed at 650℃ and at 500℃ are concluded to be C_s-O_n with n=1, 2, 3,… and C_s-O_i-O_2, respectively.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• Yamanaka Hideki

  Memc Division Huls Japan Ltd.

関連論文

• Nueleatioru of Oxygen Precipitates during Cooling Processes in Czochralski Silicon
• Enhancement and Suppression Effect of Carbon Atoms on Oxygen Aggregation and New Donor Formation in Silicon Crystals Preannealed at Low Temperatures
• Crude Estimates of Diffusivity and Supersaturation of Silicon Self-Interstitials Injected by Thermal Oxidation of Czochralski Silicon
• Formation Kinetics and Infrared Absorption of Carbon-Oxygen Complexes in Czochralski Silicon

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