Crude Estimates of Diffusivity and Supersaturation of Silicon Self-Interstitials Injected by Thermal Oxidation of Czochralski Silicon

概要

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A new approach based on the classical nucleation theory has been provided to estimate the diffusivity and the supersaturation of silicon self-interstitials (I_<si>). I_<si> injected through thermal oxidation at 1000℃ is found to reach the half-depth of the 650-μm-thick wafer within 3 min. This finding is confirmed by the observation of the depth profiles of oxygen precipitates in the wafer subjected to rapid thermal annealing at 1000℃in O_2 for up to 5 min. The diffusivity of I_<si> and the supersaturation of I_<si> reaching the half-depth of the 650-μm-thick wafers after 3 min during oxidation at 1000℃ are estimated to be 5.9×10^<-6>cm^2/s and about 6, respectively.
社団法人応用物理学会の論文
1994-04-15