A Very Simple Method of Flattening Si(111) Surface at an Atomic Level Using Oxygen-Free Water
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概要
- 論文の詳細を見る
Si(111) surfaces were found to be very easily flattened at an atomic level by immersing the wafers in water, from which dissolved oxygen was removed by the addition of sulfite ion as chemical deoxygenator, at room temperature. After the treatment with this oxygen-free water, the Si(111) surfaces slightly misoriented in the <112^^-> direction showed straight and parallel steps and wide terraces under atomic force microscopy observation. When wafers slightly misoriented in the opposite direction were treated in the same manner, the steps showed a characteristic zigzag pattern with an angle of 60°. The steps that appeared on both surfaces were attributable to monohydride steps generated on the edge of flat terraces.
- 社団法人応用物理学会の論文
- 1999-10-01
著者
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MATSUMURA Michio
Research Center for Photoenergetics of Organic Materials, Osaka University
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Matsumura Michio
Research Center For Photoenergetics Of Organic Materials Osaka University
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Fukidome Hirokazu
Riken
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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