Wide Optical-Gap, Photoconductive a-Si_xN_<1-x>: H
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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Kurata Hiroyuki
Department of Bioscience and Bioinformatics, Kyushu Institute of Technology
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Kurata Hiroyuki
Department Of Electrical Engineering Hiroshima University
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Kurata Hiroyuki
Department Of Bioscience And Bioinformatics Kyushu Institute Of Technology
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Osaka Yukio
Department Of Electrical Engineering Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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- Wide Optical-Gap, Photoconductive a-Si_xN_: H
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- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
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