Hirose Masataka | Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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概要
- HIROSE Masatakaの詳細を見る
- 同名の論文著者
- Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univerの論文著者
関連著者
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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Miyazaki S
Graduate School Of Advanced Sciences And Matters Hiroshima University
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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Hashimoto M
Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto
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Hashimoto M
Department Of Polymer Science And Engineering Faculty Of Textile Science Kyoto Institute Of Technolo
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FUKUDA Masatoshi
Department of Electrical Engineering, Hiroshima University
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林 卓
Department Of Materials Science Shonan Institute Of Technology
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SUZUKI TOHRU
Department of Chemical Engineering, Faculty of Engineering, Nagoya University
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Hiroshima University
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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Okamoto Kazuya
Central Research Laboratory Nikon Corporation
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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OKAMOTO Katsuhiko
Department of Electrical Engineering, Hiroshima University
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Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
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MIYAZAKI Seiichi
Hiroshima University
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Kurata Hiroyuki
Department of Bioscience and Bioinformatics, Kyushu Institute of Technology
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Kurata Hiroyuki
Department Of Electrical Engineering Hiroshima University
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MISHIMA Yasuyoshi
Department of Electrical Engineering, Hiroshima University
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HAYASHI Tsukasa
Department of Electrical Engineering University
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NAKAGAWA Kazuyuki
Department of Electrical Engineering, Hiroshima University
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Bjorkman Claes
Research Center for Integrated Systems, Hiroshima University
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SHIN Hidetoshi
Department of Electrical Engineering, Hiroshima University
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YASAKA Tatsuhiro
Department of Electrical Engineering, Hiroshima University
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TAKAKURA Masaru
Department of Electrical Engineering, Hiroshima University
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ALAY Josep
Research Center for Integrated Systems, Hiroshima University
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Sakikawa Nobuki
Department of Electrical Engineering, Hiroshima University
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Kurata Hiroyuki
Department Of Bioscience And Bioinformatics Kyushu Institute Of Technology
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Nakagawa Kazuyuki
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Alay Josep
Research Center For Integrated Systems Hiroshima University
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Bjorkman Claes
Research Center For Integrated Systems Hiroshima University
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IKEDA Mitsuhisa
Hiroshima University
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Kawabata K
Division Of Physics Graduate School Of Science Hokkaido University
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小柳 光正
東北大学大学院工学研究科機械知能工学専攻知能システム設計学研究室
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Kohno Atsushi
Department of Radiology, Kobe University
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HAMASAKI Toshihiko
Department of Electrical Engineering, Hiroshima University
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Yokoyama S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Kohno A
Operative Dentistry I Tsurumi University School Of Dental Medicine
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Kohno Atsushi
Department Of Diagnostic Imaging Cancer Institute Hospital Japanese Foundation Of Cancer Research
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KAWABATA Keishi
Department of Electronics, Hiroshima Institute of technology
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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MIHARA Tatsuyoshi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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SHIBA Kazutoshi
Department of Electrical Engineering, Hiroshima University
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Koyanagi Mitsumasa
Research Center for Integrated Systems, Hiroshima University
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Mihara Tatsuyoshi
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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SHIBA Kazutoshi
NEC Electronics Corporation
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Koyanagi Mitsumasa
Research Center For Integrated Systems Hiroshima University
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XU Jun
Department of Physiology and Biophysics, Institute for Computational Biomedicine, Weill Medical Coll
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Xu J
Institute Of Advanced Materials Fudan University
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Ikeda Makoto
Faculty Of Technology Tokyo University Of Agriculture And Technology
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YAMAMOTO Jin
Process Equipment Engineering Div., Canon Sales Co., Inc.
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HORIIKE Yasuhiro
Department of Electrical Engineering, Toyo University
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SAKAUE Hiroyuki
Department of Electrical Engineering, Hiroshima University
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Ikeda M
Sony Corporation Research Center
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Yamamoto J
Process Equipment Engineering Div. Canon Sales Co. Inc.
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Ueda M
Univ. Tokushima Tokushima Jpn
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Ueda M
The Institute Of Scientific And Industrial Research Osaka University
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Kohno A
Hiroshima Univ. Higashi-hiroshima Jpn
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Yamada Kazushi
Department Of Polymer Science And Engineering Kyoto Institute Of Technology
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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UEDA Masato
Department of Applied Chemistry, Faculty of Engineering, Osaka Institute of Technology
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ASAMI Kumiko
The Institute of Scientific and Industrial Research, Osaka University
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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Xu Jun
Liquid Crystal Institute And Graduate School Of Engineering Science Tokyo University Of Science
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Xu J
Akita Univ. Akita Jpn
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Xu J
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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YOSHIDA Takeshi
Department of Gastroenterology, Hokkaido University Graduate School of Medicine
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Yoshida E
Faculty Of Pharmaceutical Sciences Chiba University
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Yoshida Eiji
Ntt Access Network Systems Laboratories Optical Soliton Transmission Research Group
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Yoshida E
Institute Of Applied Physics University Of Tsukuba
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KIRIKI Yoshihiro
Department of Electrical Engineering, Hiroshima University
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INOUE Yushi
Department of Electrical Engineering, Hiroshima University
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SHIRATSUKI Yoshiyuki
Department of Electrical Engineering, Hiroshima University
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OGURA Tsuyoshi
Department of Electrical Engineering University
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MIZUBAYASHI Wataru
Department of Electrical Engineering, Hiroshima University
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Yamashita Hiroki
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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SHIMIZU Naoji
Department of Electrical Engineering, Hiroshima University
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YOSHIDA Eiji
Department of Electrical Engineering, Hiroshima University
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DEKI Hidenori
Department of Electrical Engineering, Hiroshima University
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Inayoshi Muneto
Department Of Quantum Engineering School Of Engineering Nagoya Univeristy
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SAWARA Kenichi
Research Center for Integrated Systems, Hiroshima University
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KINOSHITA Tsuyoshi
Department of Electrical Engineering, Hiroshima University
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SUNADA Takeshi
Department of Electrical Engineering, Hiroshima University
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ITOKAWA Hiroshi
Department of Electrical Engineering, Hiroshima University
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MURAYAMA Kazuro
College of Humanities and Sciences, Nihon University
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Tamao Masaki
Department of Electrical Engineering, Hiroshima University
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SHISHIDA Yoshinori
Department of Electrical Engineering, Hiroshima University
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Yamada Keiichi
Department Of Electrical Engineering Hiroshima University
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Shimizu Naoji
Department Of Electrical Engineering Hiroshima University
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Tamura K
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical Engineering Toyo University
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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SHIMIZU Naofumi
NTT Optical Network Systems Laboratories
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OGURA Toru
Government Industrial Research Institute
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Yamashita Hiroki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Shishida Yoshinori
Department Of Electrical Engineering Hiroshima University
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Kinoshita Takayuki
The Institute For Solid State Physics The University Of Tokyo:(present Sddress)fujisawa Development
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Ito M
Wakayama Univ. Wakayama Jpn
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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ISEDA Seiji
Department of Electrical Engineering, Hiroshima University
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ASAMI Kazushi
Department of Electrical Engineering, Hiroshima University
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YAMAMOTO Jirou
Department of Electrical Engineering, Hiroshima University
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Shimizu N
Department Of Electrical Engineering Hiroshima University
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Ikeda M
Toshiba Corp. Kawasaki Jpn
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堀池 靖浩
広島大工
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Asami K
The Institute Of Scientific And Industrial Research Osaka University
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Deki Hidenori
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Electrical
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Sunada Takeshi
Department Of Electrical Engineering Hiroshima University
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MIZUTANI Teruyoshi
Department of Electrical Engineering, Nagoya University
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YAMADA Keiichi
Department of Chemistry, Gunma University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Hazama Yasushi
Department Of Electrical Engineering Hiroshima University
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NAGATA Takahiro
Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University
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Murakami H
Institute For Molecular Science
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MIYAMOTO Hironobu
Department of Electrical Engineering, Hiroshima University
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Wada Takao
Department Of Lnternal Medicine School Of Medicine Keio University
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Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ueda M
Tokyo Inst. Technol. Tokyo Jpn
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Kohno Atsushi
Department Of Electrical Engineering Hiroshima University
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Nagata Tetsuya
Hitachi Research Laboratory Hitachi Ltd.
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Ikeda M
Tdk Electronic Device Business Group Akita Jpn
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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HASHIMOTO Makoto
Department of Dermatology, Asahikawa Medical College
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IMURA Takeshi
Department of Electrical Engineering, Osaka University
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CHAYAHARA Akiyoshi
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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NAKASHITA Toshio
Department of Electrical Engineering, Hiroshima University
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Hiraki Akio
Department Of Electrical Engineering Osaka University
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Murakami Hisashi
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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KIRIKI Yoshihiko
Department of Electrical Engineering, Hiroshima University
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HAYASHI Tsukasa
Nissin Electric Co.
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YAMADA Keichi
Department of Electrical Engineering, Hiroshima University
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Hayashi Tsukasa
Nisshin Electric Co.
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MIYAZAKI Seiichiand
Department of Electrical Engineering, Hiroshima University
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Miyazaki Siichi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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NAKAGAWA Kouji
Department of Electrical Engineering, Hiroshima University
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Yamazaki Tadayuki
Department of Electrical Engineering, Hiroshima University
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SAKAMOTO Kunihide
Department of Electrical Engineering, Hiroshima University
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NAMBA Tohru
Research Center for Integrated Systems, Hiroshima University
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NAGATA Takahiko
Research Center for Integrated Systems, Hiroshima University
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KURODA Yasuhide
Research Center for Integrated Systems, Hiroshima University
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Miyake Kouji
Research Center for Integrated Systems, Hiroshima University
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Miyamoto Takahiro
Research Center for Integrated Systems, Hiroshima University
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HIROSHIMA Masahito
Department of Electrical Engineering, Hiroshima University
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URANISHI Tadashi
Department of Electrical Engineering, Hiroshima University
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KANDA Kozo
Department of Electrical Engineering, Hiroshima University
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SUGIYAMA Tsutomu
Department of Electrical Engineering, Hiroshima University
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MARUYAMA Tetsuhiro
Department of Electrical Engineering, Hiroshima University
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IMAFUKU Daisuke
Department of Electrical Engineering, Hiroshima University
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YAMAKAWA Shinpei
Department of Electrical Engineering, Hiroshima University
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Miyoshi Yasutoshi
Department of Electrical Engineering, Hiroshima University
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SHINOHARA Masato
Department of Electrical Engineering, Hiroshima University
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SASAKI Sumio
Research Center for Integrated Systems, Hiroshima University
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Nagata Takahiro
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Wada Takao
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Sasaki Sumio
Research Center For Integrated Systems Hiroshima University:(permanent Address)seiko Instruments
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Yamakawa Shinpei
Department Of Electrical Engineering Hiroshima University
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Shinohara Masato
Department Of Electrical Engineering Hiroshima University
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Deguchi Tadayoshi
Department Of Electrical Engineering Hiroshima University
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Miyoshi Yasutoshi
Department Of Electrical Engineering Hiroshima University
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Mizutani Teruyoshi
Department Of Electrical Engineering Aichi Institute Of Technology
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Mizutani Teruyoshi
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Nagata T
Department Of Applied Materials Science Graduate School Of Engineering Osaka Prefecture University
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Murakami H
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Miyazaki Siichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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TSUKUDE Masaki
Department of Electrical Engineering, Hiroshima University
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AKAMATSU Susumu
Department of Electrical Engineering, Hiroshima University
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Kanda K
Univ. Tokyo Tokyo Jpn
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Namba Tohru
Research Center For Integrated Systems Hiroshima University
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Miyake K
Toyohashi Univ. Technol. Toyohashi Jpn
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Imura T
Mitsubishi Paper Mills Ltd.
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Imura T
Department Of Electrical Engineering Hiroshima University
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Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Tsukude Masaki
Department Of Electrical Engineering Hiroshima University
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Yamamoto Tomio
Department Of Electrical Engineering Hiroshima University
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Bjorkman C.
Research Center For Integrated Systems Hiroshima University
著作論文
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
- Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- Luminescence from Thermally Oxidized Porous Silicon
- Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- Amorphous Silicon Static Induction Transistor
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
- Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
- Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
- Atomic Layer Controlled Digital Etching of Silicon
- Amorphous Silicon Superlattice Thin Film Transistors
- High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering
- Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
- Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers
- Exact Determination of Bulk Gap-State Density in a-Si : H : III-1: AMORPHOUS FILMS
- Influence of Gap States on Basic Characteristics of a-Si:H Thin Film Transistors
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
- Hydrogen Implantation into CVD Amorphous Silicon : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Electrical and Optical Properties of Amorphous Germanium
- Structural and Electronic Characterization of Discharge-Produced Boron Nitride
- Localized-State-Density Distribution in Post-Hydrogenated CVD Amorphous Silicon
- Schottky Barrier Solar Cells of Weakly Hydrogenated CVD Amorphous Silicon : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Gap States and ESR of Boron-Doped CVD Amorphous Silicon
- Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon
- Localized States in Amorphous and Polycrystallized Si
- Surface States in Tunnelable MOS Structures
- Current Transport in Doped Polycrystalline Silicon
- Note on Localized States in Amorphous Germanium
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
- Optical Emission Spectroscopy of the SiH_4-NH_3-H_2 Plasma during the Growth of Silicon Nitride
- Electron Spin Resonance in Discharge-Produced Silicon Nitride
- Transport Properties of Metal-Silicon Schottky Barriers
- Contact Properties of Metal-Silicon Schottky Barriers
- Au-Cu Alloy and Ag-Cu Alloy-Silicon Schottky Barriers