ARIZUMI Tetsuya | Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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概要
関連著者
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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FUKUI Masuo
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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Fukui Masuo
Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi
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MIZUTANI Teruyoshi
Department of Electrical Engineering, Nagoya University
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Mizutani Teruyoshi
Department Of Electrical Engineering Aichi Institute Of Technology
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Mizutani Teruyoshi
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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KAKEHI Masahiro
Department of Applied Biological Chemistry, The University of Tokyo
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Kakehi Masahiro
Department Of Applied Biological Chemistry The University Of Tokyo
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UCHIDA Yukimasa
Department of Electronics, Faculty of Engineering, Nagoya University
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Uchida Yukimasa
Department Of Electronics Faculty Of Engineering Nagoya University
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Mizutani Teruyoshi
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0529, Japan
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FUKUI Masuo
Department of Electronics, Faculty of Engineering, Nagoya University
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Wada Takao
Department Of Lnternal Medicine School Of Medicine Keio University
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Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronics Nagoya University
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SHIMAKAWA Koichi
Department of Clinical Pathology, Tenri Hospital
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Noda Mikio
Department of Integrated Natural Sciences, Aichi University of Education
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Horiba Yasutaka
Department Of Electronics Nagoya University
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Horiba Yasutaka
Department Of Electrical Engineering Faculty Of Engineering Kansai University
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Wada Takao
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Kakehi Masahiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronics Nagoya University
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Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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KAKEHI Masahiro
Department of Electronics, Faculty of Engineering Nagoya University
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Horiba Yasutaka
Department of Electrical Engineering and Computer Science, Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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ARIZUMI Tetsuya
Department of Electronics, Faculty of Engineering Nagoya University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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YOSHIDA AKIRA
Department of Radiological Sciences, Hiroshima Prefectural College of Health Science
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Iwai Sohachi
Department Of Electronics Faculty Of Engineering Nagoya University
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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OZAWA Osamu
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Fukui Masuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Noda Mikio
Department Of Technology Aichi University Of Education
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Ozawa Osamu
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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SHIMOKAWA Ryuichi
Department of Electronics, Faculty of Engineering, Nagoya University
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Shimakawa Koichi
Department Of Electrical Engineering Faculty Of Engineering Gifu University
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Shimakawa Koichi
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Shimokawa Ryuichi
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address) Tanashi Branch
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UMENO Masayuki
Department of Electronics, Faculty of Engineering, Nagoya University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Umeno Masayuki
Department Of Electronics Faculty Of Engineering Nagoya University
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Hirose Masataka
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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Yoshida Akira
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Altaf Nassem
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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ARIZUMI Tetsuya
Department of Electronics, Faculty of Engineering, Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
著作論文
- ESR Centers in Silicon Monoxide
- Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
- Theory of Tunneling into Impurity Band
- Electron Microscope Investigation of Structures of Amorphous Germanium Films
- Electron Microscope Investigation of Structural Changes in Amorphous GeSe_2 Films
- Microwave Conductivity and Relaxation of Excess Phonons in CdS
- Mechanism of Off-Axis Domain Formation and Current Anomaly in Semiconducting CdS
- Light Emission Associated with High Field Domains in Semiconducting CdS
- Correction to "Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS"
- Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS
- Effect of Magnetic Field on Density Distribution of Injected Plasma in Semiconductor Rods
- Density Distributions of Injected Plasma along the Length of Semiconductor Rods
- Epitaxial Vapor Growth of Gallium Antimonide
- Sheet Resistivity of the Epitaxially Grown Germanium Layer
- Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
- Electrothermal Effects in Chalcogenide Glass Semiconductors
- ESR Study on Surface Properties of Semiconductor. : II. III-V Compounds (GaAs, GaSb and InSb)
- The Doppler Effects of the Drifting Plasma in Semiconductors
- Au-Ag Alloy-Silicon Schottky Barriers