ESR Study on Surface Properties of Semiconductor. : II. III-V Compounds (GaAs, GaSb and InSb)
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概要
- 論文の詳細を見る
Crushed samples of III-V compounds (GaAs, GaSb and InSb) show a narrow ESR signal with g=2.0027±0.0003 after vacuum heat-treatment in vacuum. It is concluded that dipolar interaction between the ESR centers and the adsorbed O_2 molecules broaden the line width and reduce the signal height. By assuming that the line broadening is proportional to the coverage of O_2 molecules on the semiconductor surfaces, heat of adsorption Q is obtained for the physically adsorbed oxygen on the surface of III-V compounds; Q=1.9±0.3, 1.8±0.3 and 1.8±0.3Kcal/mole for GaAs, GaSb and InSb respectively. The changes of the line width with air pressure suggest that some of O_2 molecules on the surface condense to form O_4 molecules at -150℃.
- 社団法人応用物理学会の論文
- 1970-12-05
著者
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MIZUTANI Teruyoshi
Department of Electrical Engineering, Nagoya University
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SHIMAKAWA Koichi
Department of Clinical Pathology, Tenri Hospital
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Mizutani Teruyoshi
Department Of Electrical Engineering Aichi Institute Of Technology
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Mizutani Teruyoshi
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Shimakawa Koichi
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Mizutani Teruyoshi
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0529, Japan
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