Preparation of Wide-Gap Hydrogenated Amorphous Silicon Carbide Thin Films by Hot-Wire Chemical Vapor Deposition at a Low Tungsten Temperature

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-01-15

著者

• MIZUTANI Teruyoshi

  Department of Electrical Engineering, Nagoya University

• NAKAJIMA TAKAYUKI

  Department of Cardiovascular Surgery, Iwate Medical University Memorial Heart Center, Iwate Medical

• Nakajima Takayuki

  Department Of Applied Chemistry Graduate School Of Science And Engineering Waseda University

• Mizutani Teruyoshi

  Department Of Electrical Engineering Aichi Institute Of Technology

• Mizutani T

  Nagoya Univ. Aichi Jpn

• SUZUOKI Yasuo

  Department of Electrical Engineering, Nagoya University

• Suzuoki Yasuo

  Department Of Electrical Engineering Nagoya University

• TABATA Akimori

  Department of Electrical Engineering, Nagoya University

• Nakajima T

  Department Of Electrical Engineering Nagoya University

• Tabata Akimori

  Department Of Electrical Engineering Nagoya University

• Mizutani Teruyoshi

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0529, Japan

• Tabata Akimori

  Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

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